Chapter 14: Semiconductor Electronics: Materials, Devices and Simple Circuits MCQs | physics Class 12 CBSE

Chapter 14: Semiconductor Electronics: Materials, Devices and Simple Circuits MCQs | physics Class 12 CBSE | ByteNotes.in

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Question 1

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In an intrinsic semiconductor at absolute zero temperature, the conduction band is:

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Question 2

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The energy band gap for silicon is approximately:

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Question 3

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Which of the following is a pentavalent dopant used to create n-type silicon?

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Question 4

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For a p-type semiconductor, which of the following correctly describes the carrier concentrations?

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Question 5

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In a forward-biased p-n junction, the effective barrier height becomes:

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Question 6

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The cut-in voltage for a germanium diode is approximately:

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Question 7

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The output frequency of a full-wave rectifier for a 50 Hz AC input is:

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Question 8

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The width of the depletion region in a p-n junction is of the order of:

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Question 9

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Which of the following is the correct expression for the mass-action law in semiconductors?

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Question 10

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In an n-type semiconductor, the donor energy level ED is located:

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Question 11

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In a reverse-biased p-n junction, the current that flows is primarily due to:

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Question 12

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The dynamic resistance of a p-n junction diode is defined as:

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Question 13

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Which of the following semiconductor devices requires a centre-tap transformer for proper operation?

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Question 14

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In the energy band diagram of a p-type semiconductor, the acceptor energy level EA is located:

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Question 15

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When a pure Si crystal (5 × 10²⁸ atoms/m³) is doped at 1 ppm with As (ni = 1.5 × 10¹⁶ m⁻³), the minority carrier concentration is approximately:

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Question 16

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The process of adding a controlled amount of impurity to a pure semiconductor to increase its conductivity is called:

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Question 17

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Which element behaves as a metal despite being in Group IV of the periodic table, because its energy band gap is 0 eV?

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Question 18

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In a half-wave rectifier circuit, the diode conducts during:

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Question 19

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The energy band gap of germanium is approximately:

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Question 20

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At equilibrium, the net current across a p-n junction is zero because:

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Chapter 14: Semiconductor Electronics: Materials, Devices and Simple Circuits | MCQs

In an intrinsic semiconductor at absolute zero temperature, the conduction band is:

The energy band gap for silicon is approximately:

Which of the following is a pentavalent dopant used to create n-type silicon?

For a p-type semiconductor, which of the following correctly describes the carrier concentrations?

In a forward-biased p-n junction, the effective barrier height becomes:

The cut-in voltage for a germanium diode is approximately:

The output frequency of a full-wave rectifier for a 50 Hz AC input is:

The width of the depletion region in a p-n junction is of the order of:

Which of the following is the correct expression for the mass-action law in semiconductors?

In an n-type semiconductor, the donor energy level ED is located:

In a reverse-biased p-n junction, the current that flows is primarily due to:

The dynamic resistance of a p-n junction diode is defined as:

Which of the following semiconductor devices requires a centre-tap transformer for proper operation?

In the energy band diagram of a p-type semiconductor, the acceptor energy level EA is located:

When a pure Si crystal (5 × 10²⁸ atoms/m³) is doped at 1 ppm with As (ni = 1.5 × 10¹⁶ m⁻³), the minority carrier concentration is approximately:

The process of adding a controlled amount of impurity to a pure semiconductor to increase its conductivity is called:

Which element behaves as a metal despite being in Group IV of the periodic table, because its energy band gap is 0 eV?

In a half-wave rectifier circuit, the diode conducts during:

The energy band gap of germanium is approximately:

At equilibrium, the net current across a p-n junction is zero because:

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